STPS20H100CT datasheet(4/11 Pages) STMICROELECTRONICS

4 / 11 page

Characteristics

STPS20H100C

4/11

Figure 1.

Average forward power dissipation

versus average forward current (per

diode)

Figure 2.

Average forward current versus

ambient temperature (

δ = 0.5, per

diode)

(W)

F(AV)

δ=tp/T

(A)

F(AV)

δ = 0.05

δ = 0.1

δ = 0.2

δ = 0.5

δ = 1

(A)

F(AV)

100

125

150

175

TO-220FPAB

TO-220AB

R=R

th(j-a)

th(j-c)

=15°C/W

th(j-a)

=40°C/W

th(j-a)

(°C)

amb

δ=tp/T

Figure 3.

Normalized avalanche power

derating versus pulse duration

Figure 4.

Normalized avalanche power

derating versus junction

temperature

0.001

0.01

0.1

0.01

0.1

100

1000

t (µs)

P(t )

(1µs)

ARM p

ARM

0.2

0.4

0.6

0.8

1.2

100

125

150

T (°C)

P(t )

(25°C)

ARM p

ARM

Figure 5.

Non repetitive surge peak forward

current versus overload duration

(maximum values, per diode,

TO-220AB, D2PAK, I2PAK)

Figure 6.

Non repetitive surge peak forward

current versus overload duration

(maximum values, per diode,

TO-220FPAB)

I (A)

1E-3

1E-2

1E-1

1E+0

100

120

140

160

180

200

δ=0.5

t(s)

T =50°C

T =75°C

T =125°C

1E-3

1E-2

1E-1

1E+0

100

120

140

I (A)

δ=0.5

t(s)

T =50°C

T =75°C

T =125°C

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