DIE DATA SHEET

www.onsemi.com

© Semiconductor Components Industries, LLC, 2023

June, 2023 − Rev. 1

1

Publication Order Number:

PCFF30H120SWF−DIE/D

Diode – Power, Bare Die

Gen VII, Fast Recovery

1200 V, 30 A

PCFF30H120SWF

Features

• Advanced Gen VII Technology

• Fast and Soft Recovery

• Maximum Junction Temperature 175°C

• Low Forward Voltage: VF = 1.78 V (Typ.) @ IF = 30 A

• Easy to Parallel Operation

Typical Applications

• Solar

• Energy Storage

• Industrial Motor Control

MECHANICAL PARAMETERS

Parameter

Value

Unit

Die Size (w/ Scribe Lane)

2,970 x 4,500

mm2

Anode Pad Size

1,987 x 3,517

mm2

Scribe Lane Width

80

mm

Die Thickness

119

mm

Top Metal

6 mm AlSiCu

Back Metal

1.65 mm Ti/NiV/Ag

Topside Passivation

Silicon Nitride plus Polyimide

Wafer Diameter

200 mm

Max Possible Die Per

Wafer

1886

Recommended Storage

Environment

In original container, in dry nitrogen,

< 6 months at an ambient temperature of 23°C

Device

Inking

Shipping

ORDERING INFORMATION

PCFF30H120SWF

Yes

Sawn Wafer

on Tape

DIE OUTLINE

VR = 1200 V

IF = 30 A

DIODE DIE

C

A