| 전자부품 데이터시트 검색엔진 |
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MRF4427R2 데이터시트(PDF) 2 Page - Advanced Power Technology |
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MRF4427R2 데이터시트(HTML) 2 Page - Advanced Power Technology |
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2 / 5 page ![]() MRF4427.PDF 4-24-03 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MRF4427, R1, R2 ELECTRICAL SPECIFICATIONS (Tcase = 25 °C) STATIC (off) Symbol Test Conditions Value Min. Typ. Max. Unit BVCEO Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, IB = 0) 20 - - Vdc BVCBO Collector-Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) 40 - - Vdc BVEBO Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) 2.0 - - Vdc ICEO Collector Cutoff Current (VCE = 20 Vdc, VBE = 0 Vdc) - - .02 mA (on) HFE DC Current Gain (IC = 100 mAdc, VCE = 5 Vdc) (IC = 360 mAdc, VCE = 5 Vdc) 10 5.0 - - 200 - VCE(sat) Collector-Emitter Saturation Voltage (IC = 100 mAdc, IB = 20 mA) 60 - mVdc DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit Ftau Current-Gain Bandwidth Product (IC = 50 mAdc, VCE = 12 Vdc, f = 200 MHz) - 1.3 - GHz Cob Output Capacitance (VCB = 12 Vdc, IE = 0, f = 1.0 MHz) - - 3.4 GHz |
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