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MS1006 데이터시트(PDF) 1 Page - Advanced Power Technology |
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MS1006 데이터시트(HTML) 1 Page - Advanced Power Technology |
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1 / 3 page ![]() MS1006 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. DESCRIPTION: The MS1006 is a 50 V Class AB epitaxial silicon NPN planar transistor designed primarily for SSB and VHF communications. This device utilizes emitter ballasting for improved ruggedness and reliability. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 55 V VEBO Emitter-Base Voltage 4.0 V IC Device Current 3.25 A PDISS Power Dissipation 127 W TJ Junction Temperature +200 °°C TSTG Storage Temperature -65 to +150 °°C Thermal Data RTH(j-c) Junction-Case Thermal Resistance 2.0 °°C/W Features Features • Optimized for SSB • 30 MHz • 50 Volts • Common Emitter • Gold Metallization • P OUT = 75 W Min. • G P = 14 dB Gain RF AND MICROWAVE TRANSISTORS HF SSB APPLICATIONS 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 |
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