MS2205

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DESCRIPTION:

DESCRIPTION:

The MS2205 is a gold metallized, silicon NPN power transistor

designed for pulsed applications with low duty cycles, such as

IFF, DME, and TACAN. It can withstand infinite VSWR under rated

conditions. The MS2205 is housed in the .250" input-matched

stripline package, resulting in improved broadband performance

and low thermal resistance.

ABSOLUTE

ABSOLUTE MAXIMUM RATINGS (T

CASE

= 25

= 25°°C)

C)

Symbol

Parameter

Value

Unit

Collector-Base Voltage

45

V

Collector-Emitter Voltage

45

V

Emitter-Base Voltage

3.5

V

Device Current*

1.0

A

Total Power Dissipation*

°°C)

21.9

W

Junction Temperature

+200

°°C

Storage Temperature

-65 to +150

°°C

THERMAL DATA

THERMAL DATA

Junction-Case Thermal Resistance*

8.0

°°C/W

*Applies only to rated RF amplifier operation

Features

Features

• DESIGNED FOR HIGH POWER PULSED IFF, DME,

TACAN APPLICATIONS

• 6.0 W (typ.) IFF 1030–1090 MHz

• 5.0 W (min.) DME 1025–1150 MHz

• 4.0 W (typ.) TACAN 960–1215 MHz

• GAIN

9 dB (typ.)

• VSWR

∞

∞:1 AT RATED CONDITIONS

• LOW THERMAL RESISTANCE

• EMITTER BALLASTED

• INPUT MATCHED COMMON-BASE CONFIGURATION

RF AND MICROWAVE TRANSISTORS

AVIONICS APPLICATIONS

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855