Microsemi

Santa Ana Division

2830 South Fairview, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989

Page 1

Copyright

 2002

MXP2001.PDF, 2002-05-03

MXP2001

Photovoltaic By-Pass Diode

50 Volts, 1.0 Amps

SAN T A ANA DIV I S I ON

DESCRI PTION

DESCRI PTION

DESCRI PTION

DESCRI PTION

Large area diode chip for medium current photovoltaic by-

pass applications, or for higher current hybrid applications.

The device is rated for 1A for applications where the device

will be exposed to substantial radiation flux (space). For

other applications, it may be operated at higher currents. A

version with attached leads is available.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

KEY FEATU R ES

KEY FEATU R ES

KEY FEATU R ES

KEY FEATU R ES

Oxide passivated structure for

very low leakage currents

Epitaxial structure minimizes

forward voltage drop

Forward voltage decreases with

radiation exposure

Qualified for space applications

Thin construction for fit with

photovoltaic cells

Rectangular shape

APPLICATIONS/BENEFIT

APPLICATIONS/BENEFIT

APPLICATIONS/BENEFIT

APPLICATIONS/BENEFITS

SS

S

Increases efficiency of

photovoltaic arrays

Protects photovoltaic cells from

reverse voltage

MAXIMUM RATINGS @ 25°C (UNLESS OTHERWISE SPECIFIED)

Description

Symbol

Max.

Unit

Peak Repetitive Reverse Voltage

50

Volts

Working Peak Reverse Voltage

50

Volts

DC Blocking Voltage

50

Volts

Average Rectified Forward Current, Tc

≤ 135°C

1.0

Amps

Junction Temperature Range

-65 to +150

°C

Storage Temperature Range

-65 to +200

°C

ELECTRICAL PARAMETERS

Description

Symbol

Conditions

Min

Typ.

Max

Unit

VR= 2.5 Vdc, Ta= 25

°C

10

200

nA

Reverse (Leakage)

Current (in dark)

VR= 10 Vdc, Ta= 25

°C

10

500

nA

Forward Voltage

VF1

IF= 0. 5 A, Ta= 25

°C

770

800

mV

pulse test, pw= 300

µs

VF2

IF= 1. 0 A, Ta= 25

°C

790

820

mV

Junction Capacitance

Cj1

VR= 4 Vdc

800

1000

pF

Breakdown Voltage

BVR

IR= 200

µA, Ta= 25°C

50

90

V