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TDA5153 데이터시트(PDF) 21 Page - NXP Semiconductors

부품명 TDA5153
상세설명  Pre-amplifier for Hard Disk Drive HDD with MR-read/inductive write heads
PDF  28 Pages
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제조업체  PHILIPS [NXP Semiconductors]
홈페이지  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

TDA5153 데이터시트(HTML) 21 Page - NXP Semiconductors

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1997 Jul 02
21
Philips Semiconductors
Preliminary specification
Pre-amplifier for Hard Disk Drive (HDD)
with MR-read/inductive write heads
TDA5153
tst(W)
write settle times; note 12
from 50%of the falling edge of
R/W to 90% of the steady state
write current (in Write Mode)
−−
70
ns
toff(W)
write amplifier off time
from rising edge of R/W to
IWR-programmed /10
(IWR = 35 mA)
−−
50
ns
tsw(W)
head switching (in write mode),
and standby to write head active
from falling edge of SEN to
write head active
−
50
70
ns
tsw(S)
sleep to (and from) any other
modes
−−
100
µs
DC characteristics
ICC(R)
supply current; note 13
read mode; IMR =10mA
−
72
80
mA
ICC(W)
supply current; note 14
write mode; IWR =35mA
from VCC (5 V)
−
33
41
mA
from VCC(WD) (5 to 8 V)
−
54
61
mA
IDD(stb)
standby mode supply current
−
0.25
1
mA
IDD(S)
sleep mode supply current
static
−
0.025
−
mA
Vref
reference voltage for Rext
−
1.32
−
V
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Notes to the characteristics
1. The differential voltage gain depends on the MR
resistance. It can be improved by programming the
d4 bit in the configuration register using the serial
interface.
2. The gain boost implements a pole-zero combination:
The +3 dB gain boost corner frequency is
The
−3 dB gain attenuation corner frequency is
where d3, d2, d1, d0 are bits (0, 1) to be programmed
via the Serial Interface. In practical use, the bandwidth
is limited by the inductance of the connection between
the MR heads and the pre-amplifier.
3. Noise calculation
a) Definitions: The amplifier has a low-ohmic input.
No lead resistance is taken into account. The input
referred noise voltage, excluding the noise of the
MR resistors, is defined as follows:
where Gv is the voltage gain and Vno is the noise
voltage at the output of the amplifier, k is the
800 MHz
8d3
⋅
4d2
⋅
2d1
⋅
1d0
⋅
+++
()
-------------------------------------------------------------------------------------
800 MHz
8d3
⋅
4d2
⋅
2d1
⋅
1d0
⋅
+++
()
-------------------------------------------------------------------------------------
V
nir
2
V
no
G
v
---------


 2
4kT
R
MR1
R
MR2
+
()
×
V
–
=
Boltzmann constant and T is the temperature in K.
The noise figure is defined as follows:
in 1 Hz bandwidth. Note that RMR includes all
resistances between Rx or Ry to ground.
b) Noise figure versus IMR and RMR: Table 1 shows
the variation of the noise figure with IMR (mA) and
RMR (Ω).
c) Input noise voltage consideration: the input
referred noise voltage calculation can significantly
be different (from 1.0 to 0.44 nV/
√Hz for instance)
by taking into account an equivalent
signal-to-noise ratio when using two MR stripes
(28
Ω for each stripe) or one MR stripes (42 W).
It assumes that the signal coming from the head is
larger for a dual stripe head than for a single stripe
head (50% extra signal for dual stripe head).
4. The channel separation is defined by the ratio of the
gain response of the amplifier using the selected head
H(n) to the gain response of the amplifier using the
adjacent head H(n
±1), Head H(n) being selected.
F
10
log
V
no
G
v
---------


 2
4kT
R
MR1
R
MR2
+
()
×
------------------------------------------------------------






×
dB
=



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