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25C160-/P 데이터시트(PDF) 11 Page - Microchip Technology |
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25C160-/P 데이터시트(HTML) 11 Page - Microchip Technology |
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11 / 22 page ![]() 2004 Microchip Technology Inc. DS21231D-page 11 25AA160/25LC160/25C160 FIGURE 3-7: WRITE STATUS REGISTER TIMING SEQUENCE 3.7 Data Protection The following protection has been implemented to prevent inadvertent writes to the array: • The write enable latch is reset on power-up •A WRITE ENABLE instruction must be issued to set the write enable latch • After a byte write, page write, or Status register write, the write enable latch is reset •CS must be set high after the proper number of clock cycles to start an internal write cycle • Access to the array during an internal write cycle is ignored and programming is continued 3.8 Power On State The 25XX160 powers on in the following state: • The device is in low power Standby mode (CS = 1) • The write enable latch is reset • SO is in high-impedance state • A low level on CS is required to enter active state TABLE 3-3: WRITE-PROTECT FUNCTIONALITY MATRIX SO SI CS 9 1011 12131415 01 0 0 0 0 00 765 4 21 0 instruction data to Status register High-impedance SCK 0 234567 18 3 WPEN WP WEL Protected Blocks Unprotected Blocks Status Register XX 0 Protected Protected Protected 0X 1 Protected Writable Writable 1 Low 1 Protected Writable Protected X High 1 Protected Writable Writable |
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