| 전자부품 데이터시트 검색엔진 |
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L295 데이터시트(PDF) 3 Page - STMicroelectronics |
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L295 데이터시트(HTML) 3 Page - STMicroelectronics |
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3 / 7 page ![]() 3/7 L295 (*) Vdrop = VCEsat Q1 + VCEsat Q2. APPLICATION CIRCUIT D2, D4 = 2A High speed diodes trr ≤ 200 ns D1, D3 = 1A High speed diodes trr ≤ 200 ns R1 = R2 = 2W L1 = L2 = 5 mH FUNCTIONAL DESCRIPTION The L295 incorporates two indipendent driver channals with separate inputs and outputs, each capable of driving an inductive load (see block diagram). The device is controlled by three micriprocessor compatible digital inputs and two analog inputs. VEN Enable Input Voltage Low High -0.3 2.2 0.8 7 V V Ii1,Ii2 Input Current Vi1 = Vi2 = L Vi1 = Vi2 = H -100 10 µA µA IEN Enable Input Current VEN = L VEN = H -100 10 µA µA Vref1, Vref2 Input Reference Voltage 0.2 2 V Iref1, Iref2 Input Reference Voltage -5 µA Fosc Oscillator Frequency C = 3.9 nF; R = 9.1 K Ω 25 46 KHz Ip Transconductance (each ch.) Vref = 1V 1.9 2 2.1 A/V Vref Vref1, Vref2 Input Reference Voltage 0.2 2 V Vref1, Vref2 Input Reference Voltage 0.2 2 V Vdrop Total Output Voltage (each channel) (*) Io = 2 A 2.8 3.6 V Vsens1, Vsens2 External sensing resistors voltage drop 2V Symbol Parameter Test Condition Min. Typ. Max. Unit L1 R1 R3 9.1K L2 R2 RS2 0.5 Ω 2 8 13 12 11 1 3 14 10 15 D2 D4 C1 0.1 µF C3 3.9nF D3 +VSS +VS +VREF2 C2 0.1 µF C4 220 µF D1 9 RS1 0.5 Ω 4 5 +VREF1 +VIN2 76 EN +VIN1 D03IN1501 ELECTRICAL CHARACTERISTCS (continued) |
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