June 2009

Doc ID 11491 Rev 3

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ST13009

High voltage fast-switching

NPN power transistor

Features

■ Low spread of dynamic parameters

■ High voltage capability

■ Minimum lot-to-lot spread for reliable operation

■ Very high switching speed

Applications

■ Switch mode power supplies

Description

The device is manufactured using high voltage

multi-epitaxial planar technology for high

switching speeds and high voltage capability. It

uses a hollow emitter structure to enhance

switching speeds.

Figure 1.

Internal schematic diagram

TO-220

1

2

3

Table 1.

Device summary

Order code

Marking (1)

Package

Packaging

ST13009

13009 L

13009 H

TO-220

Tube

1.

Product is pre-selected in DC current gain (group L and group H). STMicroelectronics reserves the right to ship either

groups according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details.

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