SCT040TO65G3 datasheet(7/15 Pages) STMICROELECTRONICS

부품명	SCT040TO65G3

상세설명	Silicon carbide Power MOSFET 650 V, 40 mΩ typ., 35 A in a TO-LL package

PDF	15 Pages

Scroll/Zoom	100%

제조업체	STMICROELECTRONICS [STMicroelectronics]

홈페이지	http://www.st.com

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Figure 13. Normalized breakdown voltage vs temperature

GADG280320241234BDV

1.2

1.1

1.0

0.9

0.8

0.7

-75

-25

125

175

V(BR)DSS

(norm.)

TJ (°C)

ID = 1 mA

Figure 14. Normalized gate threshold vs temperature

GADG280320241234VTH

1.4

1.2

1.0

0.8

0.6

0.4

-75

-25

125

175

VGS(th)

(norm.)

TJ (°C)

ID = 1 mA

Figure 15. Normalized on-resistance vs temperature

GADG280320241235RON

2.0

1.5

1.0

0.5

0.0

-75

-25

125

175

RDS(on)

(norm.)

TJ (°C)

VGS= 18 V

Figure 16. Typical reverse conduction characteristics

(TJ = 25 °C)

GADG280320241237RCC25

-20

-40

-60

-80

-100

-120

-8

-7

-6

-5

-4

-3

-2

-1

(A)

VDS (V)

VGS= -5 V

VGS= 18 V

VGS= 0 V

Figure 17. Typical reverse conduction characteristics (TJ = 175 °C)

GADG280320241237RCC175

-20

-40

-60

-80

-100

-120

-8

-7

-6

-5

-4

-3

-2

-1

(A)

VDS (V)

VGS= -5 V

VGS= 18 V

VGS= 0 V

SCT040TO65G3

Electrical characteristics

DS14654 - Rev 1

page 7/15

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