STGHU30M65DF2AG datasheet(3/16 Pages) STMICROELECTRONICS

부품명	STGHU30M65DF2AG

상세설명	Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT in an HU3PAK package

PDF	16 Pages

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제조업체	STMICROELECTRONICS [STMicroelectronics]

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Electrical characteristics

TJ = 25 °C unless otherwise specified.

Table 3. Static characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)CES

Collector-emitter breakdown

voltage

VGE = 0 V, IC = 250 μA

650

VCE(sat)

Collector-emitter saturation

voltage

VGE = 15 V, IC = 30 A

1.60

2.0

VGE = 15 V, IC = 30 A, TJ = 125 °C

1.84

VGE = 15 V, IC = 30 A, TJ = 175 °C

2.0

Forward on-voltage

IF = 30 A

1.86

2.65

IF = 30 A, TJ = 125 °C

1.6

IF = 30 A, TJ = 175 °C

1.5

VGE(th)

Gate threshold voltage

VCE = VGE, IC = 500 µA

ICES

Collector cut-off current

VGE = 0 V, VCE = 650 V

µA

IGES

Gate-emitter leakage current

VCE = 0 V, VGE = ±20 V

±250

Table 4. Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Input capacitance

VCE = 25 V, f = 1 MHz, VGE = 0 V

2393

Coes

Output capacitance

146

Cres

Reverse transfer capacitance

45.4

Total gate charge

VCC = 520 V, IC = 30 A, VGE = 0 to 15 V

(see Figure 26. Gate charge test circuit)

Qge

Gate-emitter charge

16.5

Qgc

Gate-collector charge

STGHU30M65DF2AG

Electrical characteristics

DS14705 - Rev 1

page 3/16

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