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50N06L-TN3-R 데이터시트(PDF) 1 Page - Unisonic Technologies |
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50N06L-TN3-R 데이터시트(HTML) 1 Page - Unisonic Technologies |
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1 / 6 page ![]() UNISONIC TECHNOLOGIES CO., LTD 50N06-Q Preliminary Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2021 Unisonic Technologies Co., Ltd QW-R502-C76.a 50A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 50N06-Q is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. FEATURES * RDS(ON) ≤ 27 mΩ @ VGS=10V, ID=25A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness SYMBOL ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 50N06L-TN3-R 50N06G-TN3-R TO-252 G D S Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source MARKING |
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