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STP90NF03L 데이터시트(PDF) 5 Page - STMicroelectronics |
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STP90NF03L 데이터시트(HTML) 5 Page - STMicroelectronics |
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5 / 13 page ![]() STP90NF03L - STB90NF03L-1 Electrical characteristics 5/13 Table 6. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current 90 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) 360 A VSD (2) 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD=90A, VGS=0 1.3 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=90A, di/dt = 100A/µs, VDD=15V, Tj=150°C (see Figure 14) 80 90 2.5 ns µC A |
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