TC646BEPATR datasheet(4/36 Pages) MICROCHIP

4 / 36 page

TC646B/TC648B/TC649B

DS21755B-page 4

 2003 Microchip Technology Inc.

TEMPERATURE SPECIFICATIONS

Pulse-Width Modulator

PWM Frequency

fPWM

CF = 1.0 µF

SENSE Input (TC646B & TC649B)

SENSE Input Threshold Voltage

with Respect to GND

VTH(SENSE)

Blanking time to ignore pulse due

to VOUT turn-on

tBLANK

—3.0

—

µsec

FAULT / OTF Output

Output Low Voltage

VOL

——

0.3

IOL = 2.5 mA

Missing Pulse Detector Timer

tMP

—

32/f

—

sec

TC646B and TC649B, Note 2

Start-up Timer

tSTARTUP

—32/f

—

sec

Note 2

Diagnostic Timer

tDIAG

—

3/f

—

sec

TC646B and TC649B

ELECTRICAL CHARACTERISTICS (CONTINUED)

Electrical Specifications: Unless otherwise specified, all limits are specified for -40°C < TA < +85°C, VDD = 3.0V to 5.5V.

Parameters

Sym

Min

Typ

Max

Units

Conditions

Note 1:

Ensured by design, tested during characterization.

For VDD < 3.7V, tSTARTUP and tMP timers are typically 13/f.

Electrical Characteristics: Unless otherwise noted, all parameters apply at VDD = 3.0V to 5.5V

Parameters

Sym

Min

Typ

Max

Units

Conditions

Temperature Ranges

Specified Temperature Range

-40

—

+85

°C

Operating Temperature Range

-40

—

+125

°C

Storage Temperature Range

-65

—

+150

°C

Thermal Package Resistances

Thermal Package Resistance, 8-Pin MSOP

θJA

—200

—

°C/W

Thermal Package Resistance, 8-Pin SOIC

θJA

—155

—

°C/W

Thermal Package Resistance, 8-Pin PDIP

θJA

—125

—

°C/W

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