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MCP1403-E/P 데이터시트(PDF) 10 Page - Microchip Technology |
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MCP1403-E/P 데이터시트(HTML) 10 Page - Microchip Technology |
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10 / 22 page ![]() MCP1403/4/5 DS22022B-page 10 © 2007 Microchip Technology Inc. 4.0 APPLICATION INFORMATION 4.1 General Information MOSFET drivers are high-speed, high current devices which are intended to source/sink high peak currents to charge/discharge the gate capacitance of external MOSFETs or IGBTs. In high frequency switching power supplies, the PWM controller may not have the drive capability to directly drive the power MOSFET. A MOSFET driver like the MCP1403/4/5 family can be used to provide additional source/sink current capability. 4.2 MOSFET Driver Timing The ability of a MOSFET driver to transition from a fully off state to a fully on state are characterized by the driv- ers rise time (tR), fall time (tF), and propagation delays (tD1 and tD2). The MCP1403/4/5 family of drivers can typically charge and discharge a 2200 pF load capaci- tance in 15 ns along with a typical matched propaga- tion delay of 40 ns. Figure 4-1 and Figure 4-2 show the test circuit and timing waveform used to verify the MCP1403/4/5 timing. FIGURE 4-1: Inverting Driver Timing Waveform. FIGURE 4-2: Non-Inverting Driver Timing Waveform. 4.3 Decoupling Capacitors Careful layout and decoupling capacitors are highly recommended when using MOSFET drivers. Large currents are required to charge and discharge capacitive loads quickly. For example, 2.5A are needed to charge a 2200 pF load with 18V in 16 ns. To operate the MOSFET driver over a wide frequency range with low supply impedance a ceramic and low ESR film capacitor are recommended to be placed in parallel between the driver VDD and GND. A 1.0 µF low ESR film capacitor and a 0.1 µF ceramic capacitor placed between VDD and GND pins should be used. These capacitors should be placed close to the driver to minimized circuit board parasitics and provide a local source for the required current. 4.4 PCB Layout Considerations Proper PCB layout is important in a high current, fast switching circuit to provide proper device operation and robustness of design. PCB trace loop area and inductance should be minimized by the use of ground planes or trace under MOSFET gate drive signals, separate analog and power grounds, and local driver decoupling. 0.1 µF +5V 10% 90% 10% 90% 10% 90% 18V 1µF 0V 0V MCP1403 CL = 2200 pF Input Input Output tD1 tF tD2 Output tR V DD = 18V Ceramic Input (1/2 MCP1405) 90% Input tD1 tF tD2 Output tR 10% 10% 10% +5V 18V 0V 0V 90% 90% 0.1 µF 1µF MCP1404 CL = 2200 pF Input Output V DD = 18V Ceramic Input (1/2 MCP1405) |
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