MP111-195ESLASHMB datasheet(4/26 Pages) MICROCHIP

4 / 26 page

MCP111/112

DS21889D-page 4

FIGURE 1-1:

Timing Diagram.

AC CHARACTERISTICS

TEMPERATURE CHARACTERISTICS

Electrical Specifications: Unless otherwise indicated, all limits are specified for VDD = 1V to 5.5V, RPU = 100 kΩ

(only MCP111), TA = -40°C to +125°C.

Parameters

Sym

Min

Typ

Max

Units

Conditions

VDD Detect to VOUT Inactive

tRPU

—90

—

µs

Figure 1-1 and CL = 50 pF

(Note 1)

VDD Detect to VOUT Active

tRPD

—

130

—

µs

VDD ramped from VTRIP(MAX) +

250 mV down to VTRIP(MIN) –

250 mV, per Figure 1-1,

CL = 50 pF (Note 1)

VOUT Rise Time After VOUT Active

tRT

—5

—

µs

For VOUT 10% to 90% of final

value per Figure 1-1, CL = 50 pF

(Note 1)

Note 1:

These parameters are for design guidance only and are not 100% tested.

Electrical Specifications: Unless otherwise noted, all limits are specified for VDD = 1V to 5.5V, RPU = 100 kΩ

(only MCP111), TA = -40°C to +125°C.

Parameters

Sym

Min

Typ

Max

Units

Conditions

Temperature Ranges

Specified Temperature Range

-40

—

+85

°C

MCP1XX-195

Specified Temperature Range

-40

—

+125

°C

Except MCP1XX-195

Maximum Junction Temperature

——

+150

°C

Storage Temperature Range

-65

—

+150

°C

Package Thermal Resistances

Thermal Resistance, 3L-SOT23

θJA

—

336

—

°C/W

Thermal Resistance, 3L-SC-70

θJA

—

340

—

°C/W

Thermal Resistance, 3L-TO-92

θJA

—131.9

—

°C/W

Thermal Resistance, 3L-SOT-89

θJA

—110

—

°C/W

VTRIP

VDD

VOUT

tRPU

VOH

tRT

tRPD

VOL

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