GD401SD datasheet(1/2 Pages) GTM

부품명	GD401SD

상세설명	SURFACE MOUNT SCHOTTKY BARRIER DIODE

PDF	2 Pages

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제조업체	GTM [GTM CORPORATION]

홈페이지	http://www.gtm.com.tw

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1 / 2 page

CORPORATION

GD401SD

Page: 1/2

ISSUED DATE :2005/12/20

REVISED DATE :2006/05/24B

G

G D

D 440011S

S D

D

S

S U

U R

R F

F A

A C

C E

E M

M O

O U

U N

N T

T ,, S

S C

C H

H O

O T

T T

T K

K Y

Y B

B A

A R

R R

R II E

E R

R D

D II O

O D

D E

E

V

V O

O L

L T

T A

A G

G E

E 33 00 V

V ,, C

C U

U R

R R

R E

E N

N T

T 00 .. 22 A

A

Description

The GD401SD is high frequency rectification for switching power supply.

Package Dimensions

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

0.85

1.05

A1

0

0.10

L

0.20

0.40

A2

0.80

1.00

b

0.25

0.40

D

1.15

1.45

c

0.10

0.18

E

1.60

1.80

HE

2.30

2.70

Q1

0.15 BSC.

Absolute Maximum Ratings at TA = 25 ::::

Parameter

Symbol

Ratings

Unit

Junction Temperature

Tj

+125

:

Storage Temperature

Tstg

-55 ~ +125

:

Maximum Recurrent Peak Reverse Voltage

VRRM

30

V

Maximum RMS Voltage

VRMS

21

V

Maximum DC Blocking Voltage

VDC

30

V

Peak Forward Surge Current at 8.3mSec single half sine-wave

IFSM

3.0

A

Typical Junction Capacitance between Terminal (Note 1)

CJ

40

pF

Maximum Average Forward Rectified Current

Io

0.2

A

Total Power Dissipation

PD

225

mW

Electrical Characteristics (at TA = 25 : unless otherwise noted)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Reverse Breakdown Voltage

V(BR)R

30

-

V

IR=100 A

Maximum Instantaneous Forward Voltage

VF

-

500

mV

IF=200mA

-

50

A

VR1=10V

Maximum Average Reverse Current

IR

-

100

A

VR2=30V

Notes: 1. Measured at 1.0 MHz and 0 reverse bias voltage.

2. ESD sensitive product handling required.

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