■ Electrical Characteristics (TJ=25℃ unless otherwise noted)

Parameter

Symbol

Conditions

Min

Typ

Max

Units

Static Parameter

Drain-Source Breakdown Voltage

BVDSS

VGS=0V, ID=250μA

20

V

Zero Gate Voltage Drain Current

IDSS

VDS=20V,VGS=0V

1

μA

Gate-Body Leakage Current

IGSS

VGS=±10V, VDS=0V

±

100

nA

Gate Threshold Voltage

VGS(th)

VDS= VGS, ID=250μA

0.

5

2.0

V

Static Drain-Source On-Resistance

RDS(ON)

VGS=4.5V, ID=10A

11

mΩ

VGS=2.5V, ID=4A

14

VGS=1.8V, ID=2A

18.2

Diode Forward Voltage

VSD

IS=10A,VGS=0V

1.2

V

Dynamic Parameters

Input Capacitance

Ciss

VDS=10V,VGS=0V,f=1MHZ

888

pF

Output Capacitance

Coss

133

Reverse Transfer Capacitance

Crss

117

Switching Parameters

Total Gate Charge

Qg

VGS=4.5V,VDS=10V,ID=6.8A

11.05

nC

Gate-Source Charge

Qgs

1.73

Gate-Drain Charge

Qgd

3.1

Turn-on Delay Time

tD(on)

VGS=4.5V, VDS=10V, ID=6.8A

RGEN=3Ω

7

ns

Turn-on Rise Time

tr

46

Turn-off Delay Time

tD(off)

30

Turn-off fall Time

tf

52

A.

Pulse Test: Pulse Width≤300us,Duty cycle ≤2%.

B.

RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder

mounting surface of the drain pins. RθJC is guaranteed by design, while RθJA is determined by the board design. The maximum rating presented

here is based on mounting on a 1 in 2 pad of 2oz copper.

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DMN3112SSS-13

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