93C76A-ESLASHMS datasheet(16/38 Pages) MICROCHIP

16 / 38 page

93XX46X/56X/66X/76X/86X

DS21929D-page 16

3.9

WRITE ALL (WRAL)

The Write All (WRAL) instruction will write the entire

memory array with the data specified in the command.

For 93AAXX and 93LCXX devices, after the last data

bit is clocked into DI, the falling edge of CS initiates the

self-timed auto-erase and programming cycle. For

93CXX devices, the self-timed auto-erase and pro-

gramming cycle is initiated by the rising edge of CLK on

the last data bit. Clocking of the CLK pin is not neces-

sary after the device has entered the WRAL cycle. The

WRAL command does include an automatic ERAL

cycle for the device. Therefore, the WRAL instruction

does not require an ERAL instruction, but the chip must

be in the EWEN status.

The DO pin indicates the Ready/Busy status of the

device if CS is brought high after a minimum of 250 ns

low (TCSL).

VCC must be

≥ 4.5V for proper operation of WRAL.

FIGURE 3-10:

WRAL TIMING FOR 93AAXX AND 93LCXX DEVICES

FIGURE 3-11:

WRAL TIMING FOR 93CXX DEVICES

Note:

For devices with PE functionality such as

the 93XX76C or 93XX86C, the write

sequence requires a logic high signal on

the PE pin prior to the rising edge of clock

on the last data bit.

Note:

After the Write All cycle is complete,

issuing a Start bit and then taking CS low

will clear the Ready/Busy status from DO.

CLK

HIGH-Z

•••

High-Z

Busy

Ready

TWL

VCC must be

≥ 4.5V for proper operation of WRAL.

TCSL

TSV

TCZ

CLK

HIGH-Z

•••

High-Z

Busy

Ready

TWL

TCSL

TSV

TCZ

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