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IXFN50N80Q2 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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IXFN50N80Q2 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() ISFM1261 eq IXFN50N80Q2 N-Channel MOSFET Transistor www.iscsemi.com 2 ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0, ID=1.0mA 800 - - V IDSS Zero Gate Voltage Drain Current VDS= 800V, VGS= 0 - - 50 uA IGSS Gate-Body Leakage Current VGS= ±30V,VDS= 0 - - ± 200 nA VGS(th) Gate Threshold Voltage VDS= VGS, ID= 8mA 3.0 - 6.0 V RDS(on) Drain-Source On-Resistance VGS= 10V, ID= 25A - - 160 mΩ VSD Diode Forward Voltage ISD= 50A, VGS= 0V - - 1.5 V PACKAGE OUTLINE |
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