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M2012Y 데이터시트(PDF) 1 Page - Micro Electronics

부품명 M2012Y
상세설명  HIGH BRIGHTNESS AMBER SURFACE LIGHTING
PDF  2 Pages
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제조업체  MICRO-ELECTRONICS [Micro Electronics]
홈페이지  http://www.microelectr.com.hk
Logo MICRO-ELECTRONICS - Micro Electronics

M2012Y 데이터시트(HTML) 1 Page - Micro Electronics

  M2012Y Datasheet HTML 1Page - Micro Electronics M2012Y Datasheet HTML 2Page - Micro Electronics  
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M2012Y
HIGH BRIGHTNESS
AMBER
SURFACE LIGHTING
FEATURES:
GaAsP/GaP Amber Chip
Amber Diffused Lens
Low Power Requirements
Wide Viewing Angle
ABSOLUTE MAXIMUM RATINGS
Power dissipation/Chip
Pd
60mW
Continuous Forward Current/Chip
IF
20mA
Peak Forward Current/Chip
*IFP
100mA
(*Pulse Width = 1ms , Duty Ratio = 1/10)
Reverse Voltage
VR
5V
Operating Temperature Range
Topr
-20 to +80°C
Storage Temperature Range
Tstg
-25 to +85°C
Solder Temperature (1/16 Inch from body)
260℃
Maximum Soldering Time( ≤260°C)
5 sec
ELECTRO-OPTICAL CHARACTERISTICS
(Ta=25°C)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
CONDITIONS
Forward Voltage/Chip
VF
2.1
2.8
V
IF=20mA
Reverse Current/Chip
IR
100
μA
VR=5V
Peak Wavelength
λp
589
nm
IF=20mA
Dominant Wavelength
λd
590
nm
IF=20mA
Spectral Line Half Width
Δλ
35
nm
IF=20mA
Luminous Intensity
IV
515
mcd
IF=10mA/Chip
16/5/2005
Sheet 1 of 2
(Ta=25°C)
MICRO


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