| 전자부품 데이터시트 검색엔진 |
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2SA778 데이터시트(PDF) 2 Page - Renesas Technology Corp |
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2SA778 데이터시트(HTML) 2 Page - Renesas Technology Corp |
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2 / 7 page ![]() 2SA778(K), 2SA778A(K) REJ03G0628-0300 Rev.3.00 Jul 30, 2007 Page 2 of 7 Electrical Characteristics (Ta = 25°C) 2SA778(K) 2SA778A(K) Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO –150 — — –180 — — V IC = –50 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CER –150 — — –180 — — V IC = –50 µA, RBE = 30 k Ω Collector cutoff current ICBO — — –1.0 — — — µA VCB = –100 V, IE = 0 — — — — — –1.0 µA VCB = –150 V, IE = 0 Emitter cutoff current IEBO — — –1.0 — — –1.0 µA VEB = –5 V, IC = 0 DC current transfer ratio hFE 30 100 — 40 100 200 VCE = –3 V, IE = –15 mA Collector to emitter saturation voltage VCE(sat) — –0.3 –1.0 — –0.3 –1.0 V IC = –15 mA, IB = –1 mA Base to emitter saturation voltage VBE(sat) — –0.77 –1.0 — –0.77 –1.0 V IC = –15 mA, IB = –1 mA Collector output capacitance Cob — — 10 — — 10 pF VCB = –10 V, IE = 0, f = 1 MHz Gain bandwidth product fT — 50 — — 50 — MHz VCE = –3 V, IC = –15 mA Turn on time ton — 135 — — 135 — ns VCC = –10.3 V Turn off time toff — 1.7 — — 1.7 — µs IC = 10 IB1 = –10 IB2 = –10 mA Storage time tstg — — 1.0 — — 1.0 µs VCC = –10 V, IC =–17 mA IB1 = –1mA, IB2 = –12 mA |
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