GSMBT3906 datasheet(1/2 Pages) GTM

부품명	GSMBT3906

상세설명	PNP EPITAXIAL PLANAR TRANSISTOR

PDF	2 Pages

Scroll/Zoom	100%

제조업체	GTM [GTM CORPORATION]

홈페이지	http://www.gtm.com.tw

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ISSUED DATE :2005/06/08

REVISED DATE :

G

G S

S M

M B

B T

T 33990066

P

P N

N P

P E

E P

P II T

T A

A X

X II A

A L

L P

P L

L A

A N

N A

A R

R T

T R

R A

A N

N S

S II S

S T

T O

O R

R

Description

The GSMBT3906 is designed for general purpose switching and amplifier applications.

Package Dimensions

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

0.80

1.10

L1

0.42 REF.

A1

0

0.10

L

0.15

0.35

A2

0.80

1.00

b

0.25

0.40

D

1.80

2.20

c

0.10

0.25

E

1.15

1.35

e

0.65 REF.

HE

1.80

2.40

Q1

0.15 BSC.

Absolute Maximum Ratings at Ta = 25 ::::

Parameter

Symbol

Ratings

Unit

Junction Temperature

Tj

+150

Storage Temperature

Tstg

-55 ~ +150

Collector to Base Voltage

VCBO

-40

V

Collector to Emitter Voltage

VCEO

-40

V

Emitter to Base Voltage

VEBO

-5

V

Collector Current

IC

-200

mA

Total Power Dissipation

PD

300

mW

Characteristics at Ta = 25 ::::

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

-40

-

V

IC=-10uA

BVCEO

-40

-

V

IC=-10mA

BVEBO

-5

-

V

IE=-10uA

ICES

-

-50

nA

VCB=-30V

IEBO

-

-50

nA

VEB=-3V

VCE(sat)1

-

-0.25

V

IC=-10mA, IB=-1mA

VCE(sat)2

-

-0.4

V

IC=-50mA, IB=-5mA

VBE(sat)1

-0.65

-

-0.85

V

IC=-10mA, IB=-1mA

VBE(sat)2

-

-0.95

V

IC=-50mA, IB=-5mA

hFE1

60

-

VCE=-1V, IC=-0.1mA

hFE2

80

-

VCE=-1V, IC=-1mA

hFE3

100

-

300

VCE=-1V, IC=-10mA

hFE4

60

-

VCE=-1V, IC=-50mA

hFE5

30

-

VCE=-1V, IC=-100mA

fT

250

-

MHz

VCE=-20V, IE=-10mA, f=100MHz

Cob

-

4.5

pF

VCB=-10V, f=100KHz

Cib

-

10

pF

VEB=-0.5V, f=100KHz

td

-

35

ns

VCC=-3V, VBE(OFF)=-0.5V, IC=-10mA, IB1=-1mA

tr

-

35

ns

VCC=-3V, VBE(OFF)=-0.5V, IC=-10mA, IB1=-1mA

tstg

-

225

ns

VCC=-3V, IC=-10mA, IB1=-IB2=-1mA

tf

-

75

ns

VCC=-3V, IC=-10mA, IB1=-IB2=-1mA

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