GSS4953

Page: 2/5

ISSUED DATE :2006/01/19

REVISED DATE :2006/11/09D

Electrical Characteristics (Tj = 25

unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

-30

-

-

V

Gate Threshold Voltage

-1.0

-

-2.5

V

-

5

-

S

Gate-Source Leakage Current

-

-

±100

nA

Drain-Source Leakage Current

-

-

-1

uA

-

-

53

-

-

90

m

-

11.7

-

Gate-Source Charge

-

2.1

-

Gate-Drain (“Miller”) Change

-

2.9

-

nC

-

9

-

Rise Time

-

10

-

Turn-off Delay Time

-

37

-

Fall Time

-

23

-

ns

Input Capacitance

-

582

-

Output Capacitance

-

125

-

Reverse Transfer Capacitance

-

86

-

pF

f=1.0MHz

Source-Drain Diode

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

-

-0.84

-1.2

V

Notes: 1. Surface Mounted on FR4 Board, t 10sec.

2. Pulse width 300us, duty cycle 2%.