| 전자부품 데이터시트 검색엔진 |
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LEAP1MQ 데이터시트(PDF) 4 Page - OSRAM GmbH |
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LEAP1MQ 데이터시트(HTML) 4 Page - OSRAM GmbH |
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4 / 21 page ![]() LE A P1MQ DATASHEET DATASHEET 4 | Version 1.5 | 2024-07-02 Characteristics T Board = 25 °C; IF = 6000 mA Parameter Symbol Values Peak Wavelength λ peak typ. 620 nm Dominant Wavelength 3) λ dom min. typ. max. 609 nm 613 nm 618 nm Spectral bandwidth at 50% I rel,max ∆λ typ. 17 nm Viewing angle at 50% I V 2φ typ. 120 ° Radiating surface A color typ. 2.6 x 1.55 mm² Partial Flux acc. CIE 127:2007 4) Φ E/V, 120° typ. 0.77 Forward Voltage 5) V F min. typ. max. 4.8 V 5.8 V 7.0 V Reverse voltage (ESD device) V R ESD min. 45 V Reverse voltage 2) I R = 20 mA V R max. 1.2 V Real thermal resistance junction/board R thJB real typ. 1.0 K / W Electrical thermal resistance junction/board with efficiency η e = 22 % R thJB elec. typ. 0.78 K / W |
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