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MBRF10H150CTG 데이터시트(PDF) 2 Page - ON Semiconductor |
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MBRF10H150CTG 데이터시트(HTML) 2 Page - ON Semiconductor |
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2 / 6 page ![]() MBRF10H150CTG www.onsemi.com 2 MAXIMUM RATINGS (Per Diode Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 150 V Average Rectified Forward Current (Per Leg) (Rated VR) TC = 142°C (Per Device) IF(AV) 5 10 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 150 A Operating Junction Temperature (Note 1) TJ −20 to +150 °C Storage Temperature Tstg −65 to +150 °C Voltage Rate of Change (Rated VR) dv/dt 10000 V/ms ESD Ratings: Machine Model = C Human Body Model = 3B > 400 > 8000 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Rating Symbol Value Unit Maximum Thermal Resistance − Junction−to−Case RqJC 2.5 °C/W ELECTRICAL CHARACTERISTICS (Per Diode Leg) Rating Symbol Typ Max Unit Maximum Instantaneous Forward Voltage (Note 2) (IF = 5 A, TC = 25°C) (IF = 5 A, TC = 125°C) vF 0.85 0.63 0.69 V Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TC = 25°C) (Rated DC Voltage, TC = 125°C) iR 45 20 mA mA 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. DEVICE ORDERING INFORMATION Device Order Number Package Type Shipping† MBRF10H150CTG TO−220FP (Pb−Free) 50 Units / Rail †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. |
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