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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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PIC18F44J10-E/ML 데이터시트(PDF) 309 Page - Microchip Technology |
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PIC18F44J10-E/ML 데이터시트(HTML) 309 Page - Microchip Technology |
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309 / 358 page  © 2007 Microchip Technology Inc. Preliminary DS39682C-page 307 PIC18F45J10 FAMILY TABLE 23-1: MEMORY PROGRAMMING REQUIREMENTS DC CHARACTERISTICS Standard Operating Conditions (unless otherwise stated) Operating temperature -40°C ≤ TA ≤ +85°C for industrial Param No. Sym Characteristic Min Typ† Max Units Conditions Program Flash Memory D130 EP Cell Endurance 100 1K — E/W -40 °C to +85°C D131 VPR VDD for Read VMIN —3.6 V VMIN = Minimum operating voltage D132B VPEW VDD for Self-Timed Write VMIN —3.6 V VMIN = Minimum operating voltage D133A TIW Self-Timed Write Cycle Time — 2.8 — ms D134 TRETD Characteristic Retention 20 — — Year Provided no other specifications are violated D135 IDDP Supply Current during Programming —10— mA † Data in “Typ” column is at 3.3V, 25°C unless otherwise stated. These parameters are for design guidance only and are not tested. |
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