STF80N240K6 datasheet(4/13 Pages) STMICROELECTRONICS

부품명	STF80N240K6

상세설명	N-channel 800 V, 197 mΩ typ., 16 A MDmesh K6 Power MOSFET in a TO-220FP package

PDF	13 Pages

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제조업체	STMICROELECTRONICS [STMicroelectronics]

홈페이지	http://www.st.com

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Table 7. Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD(1)

Source-drain current

ISDM(2)

Source-drain current (pulsed)

VSD(3)

Forward on voltage

ISD = 14 A, VGS = 0 V

1.5

trr

Reverse recovery time

ISD = 14 A, di/dt = 100 A/µs,

VDD = 60 V

(see Figure 19. Test circuit for inductive

load switching and diode recovery times)

335

Qrr

Reverse recovery charge

5.4

µC

IRRM

Reverse recovery current

27.5

trr

Reverse recovery time

ISD = 14 A, di/dt = 100 A/µs,

VDD = 60 V, TJ = 150 °C

(see Figure 19. Test circuit for inductive

load switching and diode recovery times)

430

Qrr

Reverse recovery charge

7.4

µC

IRRM

Reverse recovery current

1. Limited by package.

2. Pulse width limited by safe operating area.

3. Pulsed: pulse duration = 300 µs, duty cycle 1.5%.

STF80N240K6

Electrical characteristics

DS13794 - Rev 3

page 4/13

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