SWTS1002 datasheet(4/15 Pages) SEOUL

4 / 15 page

Rev. 1.00

SWTS1002

3. Absolute Maximum Ratings

(

Ta = 25°C)

Parameter

Symbol

Value

Unit

Power Dissipation

Pd*1

120

Forward Current

Peak Forward Current

IFM*2

100

Reverse Voltage

Operating Temperature

Topr

-30 ~ +85

°C

Storage Temperature

Tstg

-40 ~ +100

°C

Junction Temperature

125

°C

*1 Care is to be taken that Power Dissipation does not exceed the Absolute Maximum Rating of the product.

IFM conditions : Pulse width TW ≤ 0.1ms, Duty ratio ≤ 1/10

4. Electro-Optical Characteristics

(

Ta = 25°C)

Item

Symbol

Condition

Min

Typ

Max

Unit

Rank Y

2.7

3.0

Rank Z

3.0

3.3

Rank A

3.3

3.7

Forward Voltage

Rank B

IF = 20 mA

3.7

3.9

Reverse Current

VR = 5 V

µA

Rank J0

1000

1100

Rank J1

1100

1200

Rank J2

1200

1300

Rank J3

1300

1400

Rank J4

1400

1500

Rank J5

1500

1600

Luminous Intensity*1

Rank J6

IF = 20 mA

1600

1700

mcd

Viewing Angle*2

θ1/2

IF = 20 mA

120

0.264

0.296

Rank b

0.248

0.295

0.287

0.311

Rank e

0.276

0.315

0.307

0.330

Color Coordinates*3

Rank f

IF = 20 mA

0.294

0.339

*1 The luminous intensity

IV is measured at the peak of the spatial pattern which may not be aligned with the mechanical axis of the LED package.

Luminous Intensity Measurement allowance is ±10%

θ1/2 is the off-axis where the luminous intensity is 1/2 of the peak intensity.

*3 Measurement Uncertainty of the Color Coordinates is ±0.01

Note : All products confirm to the listed minimum and maximum specifications for electric and optical characteristics, when operated at

20mA within the maximum ratings shown above.

All measurements were made under the standardized environment of Seoul Semiconductor.

SEOUL SEMICONDUCTOR CO., LTD.

SSC-QP-7-03-44(갑)

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