Data Sheet

AD8057/AD8058

ABSOLUTE MAXIMUM RATINGS

Table 3.

Parameter

Rating

Supply Voltage (+VS to –VS)

12.6 V

Internal Power Dissipation1

SOIC Package (R)

0.8 W

SOT-23-5 Package (RT)

0.5 W

MSOP Package (RM)

0.6 W

Input Voltage (Common Mode)

±VS

Differential Input Voltage

±4.0 V

Output Short-Circuit Duration

Observe power

derating curves

Storage Temperature Range (R)

−65°C to +125°C

Operating Temperature Range (A Grade)

−40°C to +85°C

Lead Temperature (Soldering 10sec)

300°C

1

Specification is for device in free air:

8-lead SOIC package: θJA = 160°C/W

5-lead SOT-23-5 package: θJA = 240°C/W

8-Lead MSOP package: θJA = 200°C/W

Stresses above those listed under Absolute Maximum Ratings

may cause permanent damage to the device. This is a stress

rating only; functional operation of the device at these or any

other conditions above those indicated in the operational

section of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect

device reliability.

MAXIMUM POWER DISSIPATION

The maximum power that can be safely dissipated by the

AD8057/AD8058 is limited by the associated rise in junction

temperature. Exceeding a junction temperature of 175°C for

an extended period can result in device failure. Although the

AD8057/AD8058 is internally short-circuit protected, this may

not be sufficient to guarantee that the maximum junction temper-

ature (150°C) is not exceeded under all conditions. To ensure

proper operation, it is necessary to observe the maximum power

derating curves.

AMBIENT TEMPERATURE (°C)

2.0

1.5

0

–50 –40 –30 –20 –10

0

10

20

30

40

50

60

70

80

90

1.0

0.5

TJ = 150°C

8-LEAD SOIC

8-LEAD MSOP

SOT-23-5

Figure 5. Maximum Power Dissipation vs. Ambient Temperature

ESD CAUTION

Rev. E | Page 5 of 16