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PY264-45PC 데이터시트(PDF) 2 Page - Pyramid Semiconductor Corporation

부품명 PY264-45PC
상세설명  8K X 8 REPROGRAMMABLE PROM
PDF  8 Pages
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제조업체  PYRAMID [Pyramid Semiconductor Corporation]
홈페이지  http://www.pyramidsemiconductor.com
Logo PYRAMID - Pyramid Semiconductor Corporation

PY264-45PC 데이터시트(HTML) 2 Page - Pyramid Semiconductor Corporation

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PY264
Page 2 of 8
Document # EPROM102 REV OR
MAXIMUM RATINGS(1)
Symbol
Parameter
Value
Unit
V
CC
Power Supply Pin with
–0.5 to +7
V
Respect to GND
Terminal Voltage with
–0.5 to
V
TERM
Respect to GND
V
CC +0.5
V
(up to 7.0V)
V
PP
Program Voltage
13
V
Symbol
Parameter
Value
Unit
T
A
Operating Temperature
–55 to +125
°C
T
BIAS
Temperature Under
–55 to +125
°C
Bias
T
STG
Storage Temperature
–65 to +150
°C
P
T
Power Dissipation
1.0
W
I
OUT
DC Output Current
50
mA
Symbol
Parameter
Conditions Typ. Unit
C
IN
Input Capacitance
V
IN = 0V
10
pF
C
OUT
Output Capacitance V
OUT= 0V
10
pF
Grade(2)
Ambient Temp
Gnd
Vcc
Commercial
0°C to 70°C
0V
5.0V ±10%
Military
-55°C to +125°C
0V
5.0V ±10%
RECOMMENDED OPERATING CONDITIONS
CAPACITANCES(4)
(V
CC = 5.0V, TA = 25°C, f = 1.0MHz)
DC ELECTRICAL CHARACTERISTICS
Over recommended operating temperature and supply voltage(2)
V
PP
Programming Supply Voltage
12
13
50
V
mA
Programming Supply Current
I
PP
Symbol
V
IH
V
IL
V
HC
V
LC
V
OL
V
OH
I
LI
I
LO
Parameter
Input High Voltage
Input Low Voltage
CMOS Input High Voltage
CMOS Input Low Voltage
Output Low Voltage (TTL Load)
Output High Voltage (TTL Load)
Input Leakage Current
Output Leakage Current
Test Conditions
I
OL = +16 mA, VCC = Min.
I
OH = –4 mA, VCC = Min.
V
CC = Max.
V
IN = GND to VCC
V
CC = Max., CE = VIH,
V
OUT = GND to VCC
PY264
Min
2.0
–0.5(3)
V
CC –0.2
–0.5(3)
2.4
–10
–10
Max
V
CC
0.8
V
CC +0.5
0.2
0.4
+10
+10
Unit
V
V
V
V
V
V
µA
µA
I
CC
Symbol
Parameter
Temperature Range
Dynamic Operating Current*
Commercial
Military
–35
–55
Unit
mA
mA
POWER DISSIPATION CHARACTERISTICS VS. SPEED
120
120
120
100
100
100
–45
V
IHP
Input HIGH Programming Voltage
4.75
V
V
ILP
Input LOW Programming Voltage
0.4
V
COM
–40
+40
µA
MIL



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