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2SC6071 데이터시트(PDF) 2 Page - Sanyo Semicon Device |
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2SC6071 데이터시트(HTML) 2 Page - Sanyo Semicon Device |
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2 / 4 page ![]() 2SC6071 No. A0271-2/4 Continued from preceding page. Ratings Parameter Symbol Conditions min typ max Unit Collector-to-Base Breakdown Voltage V(BR)CBO IC=100µA, IE=0A 120 V Collector-to-Emitter Breakdown Voltage V(BR)CES IC=100µA, RBE=0Ω 120 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, RBE=∞ 50 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=100µA, IC=0A 8 V Turn-On Time ton See specified Test Circuit. 40 ns Storage Time tstg See specified Test Circuit. 1000 ns Fall Time tf See specified Test Circuit. 80 ns Package Dimensions Package Dimensions unit : mm unit : mm 7518-003 7003-003 Switching Time Test Circuit 6.5 5.0 2.3 0.5 12 4 3 0.85 0.7 1.2 0.6 0.5 2.3 2.3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP VR RB VCC=20V VBE= --5V + + 50 Ω INPUT OUTPUT RL 100 µF 470 µF PW=20 µs IB1 D.C. ≤1% IB2 IC=20IB1= --20IB2=3A 6.5 5.0 2.3 0.5 12 4 3 0.85 0.6 0.5 1.2 2.3 2.3 0 to 0.2 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA |
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