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P3C1024L55SC 데이터시트(PDF) 7 Page - Pyramid Semiconductor Corporation |
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P3C1024L55SC 데이터시트(HTML) 7 Page - Pyramid Semiconductor Corporation |
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7 / 10 page ![]() P3C1024L Page 7 of 9 Document # SRAM132 REV OR DATA RETENTION 1. CE 1 ≥ VDR -0.2V, CE2 ≥ VDR -0.2V or CE2 ≤ 0.2V; or CE1 ≤ 0.2V, CE2 - 0.2V; VIN ≥ VDR -0.2V or VIN ≤ 0.2V 2. V CC ramp from VDR to VCC (min) > 100 µs for full device operation. LOW V CC DATA RETENTION WAVEFORM 1 (CE CE CE CE CE 1 CONTROLLED) Symbol Parameter Test Conditions Unit Max Min V DR I CCDR (1) V CC for Data Retention Data Retention Current CE 1 ≥ VCC -0.2V, CE2 ≤ 0.2V, V IN ≥ VCC -0.2V or VIN ≤ 0.2V 2.0 V V DR = 2.0V 10 µA t R Operating Recovery Time(2) Chip Deselect to Data Retention Time See Retention Waveform 100 0 µs ns t CDR LOW V CC DATA RETENTION WAVEFORM 2 (CE2 CONTROLLED) |
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