P4C163/163L

Page 4 of 12

Document # SRAM120 REV C

Symbol

Parameter

Unit

-25

-35

-45

Min Max Min Max Min Max

t

RC

Read Cycle Time

25

35

45

ns

t

AA

Address Access Time

25

35

45

ns

t

AC

Chip Enable

25

35

45

ns

Access Time

t

OH

Output Hold from

3

3

3

ns

Address Change

t

LZ

Chip Enable to

3

3

3

ns

Output in Low Z

t

HZ

Chip Disable to

10

15

20

ns

Output in High Z

t

OE

Output Enable

13

18

20

ns

Low to Data Valid

t

OLZ

Output Enable

3

3

3

ns

Low to Low Z

t

OHZ

Output Enable

12

15

20

ns

High to High Z

t

PU

Chip Enable to

0

0

0

ns

Power Up Time

t

PD

Chip Disable to

20

20

25

ns

Power Down Time

AC ELECTRICAL CHARACTERISTICS—READ CYCLE

(V

(2)

READ CYCLE NO. 1 (OE

OE

OE

OE

Notes:

5. WE is HIGH for READ cycle.

6. CE

7. ADDRESS must be valid prior to, or coincident with CE

LOW and CE

8. Transition is measured ± 200mV from steady state voltage prior to

change, with loading as specified in Figure 1. This parameter is

sampled and not 100% tested.