전자부품 데이터시트 검색엔진
  Korean  ▼
ALLDATASHEET.CO.KR

X  

Preview PDF HTML

P4C116-35JM 데이터시트(PDF) 3 Page - Pyramid Semiconductor Corporation

부품명 P4C116-35JM
상세설명  ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS
PDF  14 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
제조업체  PYRAMID [Pyramid Semiconductor Corporation]
홈페이지  http://www.pyramidsemiconductor.com
Logo PYRAMID - Pyramid Semiconductor Corporation

P4C116-35JM 데이터시트(HTML) 3 Page - Pyramid Semiconductor Corporation

  P4C116-35JM Datasheet HTML 1Page - Pyramid Semiconductor Corporation P4C116-35JM Datasheet HTML 2Page - Pyramid Semiconductor Corporation P4C116-35JM Datasheet HTML 3Page - Pyramid Semiconductor Corporation P4C116-35JM Datasheet HTML 4Page - Pyramid Semiconductor Corporation P4C116-35JM Datasheet HTML 5Page - Pyramid Semiconductor Corporation P4C116-35JM Datasheet HTML 6Page - Pyramid Semiconductor Corporation P4C116-35JM Datasheet HTML 7Page - Pyramid Semiconductor Corporation P4C116-35JM Datasheet HTML 8Page - Pyramid Semiconductor Corporation P4C116-35JM Datasheet HTML 9Page - Pyramid Semiconductor Corporation Next Button
Zoom Inzoom in Zoom Outzoom out
 3 / 14 page
background image
P4C116/P4C116L
Page 3 of 14
Document # SRAM110 REV A
AC ELECTRICAL CHARACTERISTICS—READ CYCLE
(V
CC = 5V ± 10%, All Temperature Ranges)
(2)
Sym.
t
RC
t
AA
t
AC
t
OH
t
LZ
t
HZ
t
OE
t
OLZ
t
OHZ
t
PU
t
PD
Parameter
Output Enable Low to Data Valid
Chip Enable to Power Up Time
Chip Disable to Power Down
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Hold from Address Change
Chip Enable to Output in Low Z
Chip Disable to Output in High Z
Output Enable Low to Low Z
Output Enable High to High Z
–10
Min Max
–12
Min Max
–15
Min Max
–20
Min Max
–25
Min Max
–35
Min Max
Unit
15
15
15
2
2
7
10
0
8
0
15
20
2
2
0
0
20
20
8
10
9
20
25
2
3
0
0
25
25
10
15
12
20
35
2
3
0
0
35
35
15
20
15
25
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
10
2
2
0
0
10
10
5
10
12
2
2
0
0
12
12
6
12
*V
CC = 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V. CE = VIL, OE = VIH.
I
CC
Symbol
Parameter
Temperature
Range
Dynamic Operating Current*
Commercial
Military
–10
N/A
–12
–20
–25
–35
Unit
mA
mA
POWER DISSIPATION CHARACTERISTICS VS. SPEED
N/A
170
160
155
150
180
170
160
155
150
140
–15
67
8
6
DATA RETENTION CHARACTERISTICS (P4C116L Military Temperature Only)
Symbol
V
DR
I
CCDR
t
CDR
t
R
†
Parameter
V
CC for Data Retention
Data Retention Current
Chip Deselect to
Data Retention Time
Operation Recovery Time
Test Conditons
CE
≥ V
CC –0.2V,
V
IN ≥ VCC –0.2V
or V
IN ≤ 0.2V
Min
2.0
0
t
RC
§
Typ.*
V
CC =
2.0V
3.0V
Max
V
CC =
2.0V
3.0V
Unit
10
15
600
900
V
µA
ns
ns
*T
A = +25°C
§t
RC = Read Cycle Time
†
This parameter is guaranteed but not tested.
DATA RETENTION WAVEFORM



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14


데이터시트 다운로드

Go To PDF Page


링크 URL



ALLDATASHEET 가 귀하에 도움이 되셨나요?  [ DONATE ] 

Alldatasheet는?   |   광고문의   |   운영자에게 연락하기   |   개인정보취급방침   |   링크 투 데이터시트    |   링크교환   |   제조사별 검색
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com