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P4C189 데이터시트(PDF) 3 Page - Pyramid Semiconductor Corporation |
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P4C189 데이터시트(HTML) 3 Page - Pyramid Semiconductor Corporation |
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3 / 8 page ![]() P4C189 Page 3 of 8 Document # SRAM100 Rev OR addressed word is read out on the inverting outputs (O 0 through O 3). The outputs of the memory go to an inactive high impedance state whenever chip select (CS) is HIGH, or during the write operation when write enable (WE) is LOW. An active LOW write enable (WE) controls the writing/ reading operation of the memory. When chip select (CS) and write enable (WE) are LOW, the information on data inputs (D 0 through D3) is written into the addressed memory word. Reading is performed with chip select (CS) LOW and write enable (WE) HIGH. The information stored in the FUNCTIONALDESCRIPTION Notes: H = HIGH L = Low X = Don't Care HIGH Z = Implies outputs are disabled or off. This condition is defined as high impedance state. Mode CS CS CS CS CS WE WE WE WE WE Output Standby H X High Z Read L H D OUT Write L L High Z TRUTH TABLE TIMING WAVEFORM OF READ CYCLE NO. 1(5) Sym. t RC t AA t AC t HZ Read Cycle Time Chip Enable Access Time Output Hold from Address Change Chip Enable to Output in Low Z Chip Disable to Output in High Z -35 Unit ns ns ns ns ns ns AC CHARACTERISTICS—READ CYCLE (V CC = 5V ± 10%, All Temperature Ranges) (2) Min 35 2 2 Max 35 15 10 Parameter Address Access Time t OH t LZ |
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