| 전자부품 데이터시트 검색엔진 |
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P4C1298 데이터시트(PDF) 7 Page - Pyramid Semiconductor Corporation |
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P4C1298 데이터시트(HTML) 7 Page - Pyramid Semiconductor Corporation |
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7 / 11 page ![]() P4C1298/L Page 7 of 11 Document # SRAM135 REV OR Input Pulse Levels GND to 3.0V Input Rise and Fall Times 3ns Input Timing Reference Level 1.5V Output Timing Reference Level 1.5V Output Load See Figures 1 and 2 Mode CE CE CE CE CE WE WE WE WE WE Output Power Standby H X High Z Standby Read L H D OUT Active Write L L D IN Active * including scope and test fixture. Note: Because of the ultra-high speed of the P4C1298, care must be taken when testing this device; an inadequate setup can cause a normal functioning part to be rejected as faulty. Long high-inductance leads that cause supply bounce must be avoided by bringing the V CC and ground planes directly up to the contactor fingers. A 0.01 µF high frequency capacitor is also required between V CC and ground. To avoid signal reflections, proper termination must be used; for example, a 50 Ω test environment should be terminated into a 50 Ω load with 1.73V (Thevenin Voltage) at the comparator input, and a 116 Ω resistor must be used in series with D OUT to match 166Ω (Thevenin Resistance). Figure 1. Output Load Figure 2. Thevenin Equivalent AC TEST CONDITIONS TRUTH TABLE TIMING WAVEFORM OF WRITE CYCLE NO. 2 ( CE CE CE CE CE CONTROLLED)(9,10) |
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