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2SC5990 데이터시트(PDF) 2 Page - Sanyo Semicon Device

부품명 2SC5990
상세설명  NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications
PDF  4 Pages
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제조업체  SANYO [Sanyo Semicon Device]
홈페이지  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

2SC5990 데이터시트(HTML) 2 Page - Sanyo Semicon Device

  2SC5990 Datasheet HTML 1Page - Sanyo Semicon Device 2SC5990 Datasheet HTML 2Page - Sanyo Semicon Device 2SC5990 Datasheet HTML 3Page - Sanyo Semicon Device 2SC5990 Datasheet HTML 4Page - Sanyo Semicon Device  
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2SC5990
No.8118-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Output Capacitance
Cob
VCB=10V, f=1MHz
15
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=1A, IB=50mA
65
100
mV
IC=2A, IB=100mA
110
165
mV
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=2A, IB=100mA
0.88
1.3
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=10µA, IE=0A
100
V
Collector-to-Base Breakdown Voltage
V(BR)CES
IC=100µA, RBE=0Ω
100
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=1mA, RBE=∞
50
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=10µA, IC=0A
-6
V
Turn-ON Time
ton
See specified Test Circuit.
35
ns
Storage Time
tstg
See specified Test Circuit.
300
ns
Fall Time
tf
See specified Test Circuit.
20
ns
Package Dimensions
Switching Time Test Circuit
unit : mm
7007-004
1.5
0.5
0.4
3.0
4.5
1.6
0.4
12
3
1.5
Top View
Bottom View
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
IT08356
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
IC -- VBE
Base-to-Emitter Voltage, VBE -- V
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
VCE=2V
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
0
0
0.5
1.0
1.5
2.0
3.0
4.0
2.5
3.5
IT09552
0.1
0.2
0.5
0.6
0.3
0.4
0.7
0.8
0.9
1.0
IB=0mA
5mA
10mA
15mA
20mA
30mA
40mA
50mA
80mA
60mA
VR10
RL=25Ω
VCC=25V
VBE= --5V
10IB1= --10IB2= IC=1A
+
+
50
Ω
INPUT
OUTPUT
RB
100
µF
470
µF
PW=20
µs
IB1
IB2
D.C.
≤1%



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