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SCTW90N65 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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SCTW90N65 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() ISCF8079 eq SCTW90N65 SiC N-Channel MOSFET www.iscsemi.com 2 ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0V, ID= 1.0mA 650 -- -- V IGSS Gate Source Leakage Current VGS= 25V, VDS= 0V -- -- 100 nA VGS= -10V, VDS= 0V -- -- -100 IDSS Zero Gate Voltage Drain Current VDS = 650V, VGS = 0V -- -- 10 uA VGS(th) Gate Threshold Voltage VDS = VGS, ID = 0.25mA 1.9 -- 5.0 V RDS(ON) Drain-Source On-stage Resistance VGS= 18V, ID= 50A -- -- 24 mΩ VSD Diode Forward Voltage ISD= 30A, VGS= 0V -- 2.5 -- V PACKAGE DIMENSIONS (UNIT: mm): |
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