BUT11 datasheet(2/6 Pages) POINN

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BUT11

NPN SILICON POWER TRANSISTOR

MAY 1989 - REVISED MARCH 1997

PRODUCT

INFORMATION

NOTES: 2. Inductive loop switching measurement.

3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.

4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

VCEO(sus)

Collector-emitter

sustaining voltage

IC =

0.1 A

L = 25 mH

(see Note 2)

400

ICES

Collector-emitter

cut-off current

VCE = 850 V

VBE = 0

TC = 125°C

500

µA

IEBO

Emitter cut-off

current

VEB = 10 V

IC = 0

hFE

Forward current

transfer ratio

VCE =

5 V

IC = 0.5 A

(see Notes 3 and 4)

VCE(sat)

Collector-emitter

saturation voltage

IB =

0.6 A

IC = 3 A

(see Notes 3 and 4)

1.5

VBE(sat)

Base-emitter

saturation voltage

IB =

0.6 A

IC = 3 A

(see Notes 3 and 4)

1.3

Current gain

bandwidth product

VCE =

10 V

IC = 0.5 A

f =

1 MHz

MHz

Cob

Output capacitance

VCB =

20 V

IE = 0

f = 0.1 MHz

110

thermal characteristics

PARAMETER

MIN

TYP

MAX

UNIT

RθJC

Junction to case thermal resistance

1.25

°C/W

inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER

TEST CONDITIONS †

MIN

TYP

MAX

UNIT

tsv

Voltage storage time

IC = 3 A

VCC = 50 V

IB(on) = 0.6A

(see Figures 1 and 2)

VBE(off) = -5 V

1.4

µs

tfi

Current fall time

150

tsv

Voltage storage time

IC = 3 A

VCC = 50 V

IB(on) = 0.6A

TC = 100°C

VBE(off) = -5 V

1.5

µs

tfi

Current fall time

300

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