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MBR10150 데이터시트(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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MBR10150 데이터시트(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 2 page ![]() Dimensions in inches and (millimeters) Version: A06 MBR1035 - MBR10150 10.0 AMPS. Schottky Barrier Rectifiers TO-220AC .412(10.5) MAX .185(4.70) .175(4.44) .055(1.40) .045(1.14) .27(6.86) .23(5.84) .11(2.79) .10(2.54) .025(0.64) .014(0.35) .154(3.91) .148(3.74) DIA PIN1 2 .113(2.87) .103(2.62) .16(4.06) .14(3.56) .037(0.94) .027(0.68) .205(5.20) .195(4.95) .594(15.1) .587(14.9) .56(14.22) .53(13.46) PIN 1 PIN 2 CASE Features Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications Guardring for overvoltage protection High temperature soldering guaranteed: 260 oC/10 seconds,0.25”(6.35mm)from case Mechanical Data Cases: JEDEC TO-220AC molded plastic body Terminals: Pure tin plated, lead free. solderable per MIL-STD-750, Method 2026 Polarity: As marked Mounting position: Any Mounting torque: 5 in. - lbs. max Weight: 0.08 ounce, 2.24 grams Maximum Ratings and Electrical Characteristics Rating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Symbol MBR 1035 MBR 1045 MBR 1050 MBR 1060 MBR 1090 MBR 10100 MBR 10150 Units Maximum Recurrent Peak Reverse Voltage VRRM 35 45 50 60 90 100 150 V Maximum RMS Voltage VRMS 24 31 35 42 63 70 105 V Maximum DC Blocking Voltage VDC 35 45 50 60 90 100 150 V Maximum Average Forward Rectified Current at Tc=125 oC I(AV) 10 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20KHz) at Tc=125 oC IFRM 32 A Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) IFSM 150 A Peak Repetitive Reverse Surge Current (Note 1) IRRM 1.0 0.5 A Maximum Instantaneous Forward Voltage at: (Note 2) IF=10A, TC=25 oC IF=10A, TC=125 oC IF=20A, TC=25 oC IF=20A, TC=125 oC VF 0.70 0.57 0.84 0.72 0.80 0.70 0.95 0.85. 0.85 0.71 - - 1.05 - - - V 0.1 Maximum Instantaneous Reverse Current @ Tc =25 oC at Rated DC Blocking Voltage @ Tc=125 oC (Note 2) IR 15 10 0.1 6.0 mA mA Voltage Rate of Change (Rated VR) dV/dt 10,000 V/uS Typical Junction Capacitance Cj 500 pF Maximum Typical Thermal Resistance(Note 3) RθJC 3.0 oC/W Operating Junction Temperature Range TJ -65 to +150 oC Storage Temperature Range T STG -65 to +175 oC Notes : 1. 2.0us Pulse Width, f=1.0 KHz 2. Pulse Test: 300us Pulse Width, 1% Duty Cycle 3. Thermal Resistance from Junction to Case Per Leg with Heatsink Size of 2 in x 3 in x 0.25 in Al-Plate. |
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