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MBR10150 데이터시트(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

부품명 MBR10150
상세설명  10.0 AMPS. Schottky Barrier Rectifiers
PDF  2 Pages
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제조업체  TSC [Taiwan Semiconductor Company, Ltd]
홈페이지  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

MBR10150 데이터시트(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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Dimensions in inches and (millimeters)
Version: A06
MBR1035 - MBR10150
10.0 AMPS. Schottky Barrier Rectifiers
TO-220AC
.412(10.5)
MAX
.185(4.70)
.175(4.44)
.055(1.40)
.045(1.14)
.27(6.86)
.23(5.84)
.11(2.79)
.10(2.54)
.025(0.64)
.014(0.35)
.154(3.91)
.148(3.74)
DIA
PIN1
2
.113(2.87)
.103(2.62)
.16(4.06)
.14(3.56)
.037(0.94)
.027(0.68)
.205(5.20)
.195(4.95)
.594(15.1)
.587(14.9)
.56(14.22)
.53(13.46)
PIN 1
PIN 2
CASE
Features
Plastic material used carries Underwriters
Laboratory Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
260
oC/10 seconds,0.25”(6.35mm)from case
Mechanical Data
Cases: JEDEC TO-220AC molded plastic body
Terminals: Pure tin plated, lead free. solderable per
MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
Maximum Ratings and Electrical Characteristics
Rating at 25
oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol MBR
1035
MBR
1045
MBR
1050
MBR
1060
MBR
1090
MBR
10100
MBR
10150 Units
Maximum Recurrent Peak Reverse Voltage
VRRM
35
45
50
60
90
100
150
V
Maximum RMS Voltage
VRMS
24
31
35
42
63
70
105
V
Maximum DC Blocking Voltage
VDC
35
45
50
60
90
100
150
V
Maximum Average Forward Rectified Current
at Tc=125
oC
I(AV)
10
A
Peak Repetitive Forward Current (Rated VR,
Square Wave, 20KHz) at Tc=125
oC
IFRM
32
A
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method )
IFSM
150
A
Peak Repetitive Reverse Surge Current (Note 1)
IRRM
1.0
0.5
A
Maximum Instantaneous Forward Voltage at:
(Note 2)
IF=10A, TC=25
oC
IF=10A, TC=125
oC
IF=20A, TC=25
oC
IF=20A, TC=125
oC
VF
0.70
0.57
0.84
0.72
0.80
0.70
0.95
0.85.
0.85
0.71
1.05
V
0.1
Maximum Instantaneous Reverse Current
@ Tc =25
oC at Rated DC Blocking Voltage
@ Tc=125
oC
(Note 2)
IR
15
10
0.1
6.0
mA
mA
Voltage Rate of Change (Rated VR)
dV/dt
10,000
V/uS
Typical Junction Capacitance
Cj
500
pF
Maximum Typical Thermal Resistance(Note 3)
RθJC
3.0
oC/W
Operating Junction Temperature Range
TJ
-65 to +150
oC
Storage Temperature Range
T
STG
-65 to +175
oC
Notes
:
1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Thermal Resistance from Junction to Case Per Leg with Heatsink Size of 2 in x 3 in x 0.25 in Al-Plate.


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