MBR20200CT datasheet(1/2 Pages) TSC

부품명	MBR20200CT

상세설명	20.0 AMPS. Schottky Barrier Rectifiers

PDF	2 Pages

Scroll/Zoom	100%

제조업체	TSC [Taiwan Semiconductor Company, Ltd]

홈페이지	http://www.taiwansemi.com

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1 / 2 page

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MBR2035CT THRU MBR20200CT

20.0 AMPS. Schottky Barrier Rectifiers

Voltage Range

35 to 200 Volts

Current

20.0 Amperes

Features

Plastic material used carries Underwriters Laboratory

Classifications 94V-0

Metal silicon junction, majority carrier conduction

Low power loss, high efficiency

High current capability, low forward voltage drop

High surge capability

For use in low voltage, high frequency inverters, free

wheeling, and polarity protection applications

Guardring for overvoltage protection

High temperature soldering guaranteed:

260

oC/10 seconds,0.25”(6.35mm)from case

Mechanical Data

Cases: JEDEC TO-220 molded plastic

Terminals: Leads solderable per MIL-STD-750, Method

2026

Polarity: As marked

Mounting position: Any

Mounting torque: 5 in. - lbs. max

Weight:

0.08 ounce, 2.24 grams

TO-220

Dimensions in inches and (millimeters)

Maximum Ratings and Electrical Characteristics

Rating at 25

℃ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

Type Number

Symbol MBR20

35CT

MBR20

45CT

MBR20

50CT

MBR20

60CT

MBR20

100CT

MBR20

150CT

MBR20

200CT

Units

Maximum Recurrent Peak Reverse Voltage

VRRM

35

45

50

60

100

150

200

V

Maximum RMS Voltage

VRMS

24

31

35

42

70

105

140

V

Maximum DC Blocking Voltage

VDC

35

45

50

60

100

150

200

V

Maximum Average Forward Rectified Current

at TC=135

oC

I(AV)

20

A

Peak Repetitive Forward Current (Rated VR,

Square Wave, 20KHz) at Tc=135

oC

IFRM

20.0

A

Peak Forward Surge Current, 8.3 ms Single Half

Sine-wave Superimposed on Rated Load (JEDEC

method )

IFSM

150

A

Peak Repetitive Reverse Surge Current (Note 1)

IRRM

1.0

0.5

1.0

A

Maximum Instantaneous Forward Voltage at (Note 2)

IF=10A, TC=25

OC

IF=10A, TC=125

OC

IF=20A, TC=25

OC

IF=20A, TC=125

OC

VF

-

0.57

0.84

0.72

0.80

0.70

0.95

0.85

0.75

0.95

0.85

0.99

0.87

1.23

1.10

V

0.1

0.15

1.0

Maximum Instantaneous Reverse Current @ Tc=25

℃

at Rated DC Blocking Voltage

@ Tc=125

℃

IR

15

20

mA

Voltage Rate of Change, (Rated VR)

dV/dt

10,000

V/uS

Typical Junction Capacitance

Cj

400

320

pF

Typical Thermal Resistance Per Leg (Note 3)

R

θJC

1.0

2.0

℃/W

Operating Junction Temperature Range

TJ

-65 to +150

℃

Storage Temperature Range

TSTG

-65 to +175

℃

Notes: 1. 2.0us Pulse Width, f=1.0 KHz

2. Pulse Test: 300us Pulse Width, 1% Duty Cycle

3. Thermal Resistance from Junction to Case Per Leg, with Heatsink Size (4”x6”x0.25”) Al-Plate.

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MBR20200CT 데이터시트(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

MBR20200CT 데이터시트(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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