| 전자부품 데이터시트 검색엔진 |
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TMUX1574DYYR 데이터시트(PDF) 19 Page - Texas Instruments |
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TMUX1574DYYR 데이터시트(HTML) 19 Page - Texas Instruments |
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19 / 44 page ![]() VDD VDD GND 1 MHz Capacitance Meter Capacitance is measured at SX, DX, and logic pins during ON and OFF conditions S1A D1 S1B S4A D4 S4B SEL LOGIC CONTROL EN VOUT Output VS 0 V VDD QC = CL × VOUT VEN GND OUTPUT CL D1 VDD VDD 0.1 F VOUT VEN VS S1A S1B OUTPUT CL D4 VOUT VS S4A S4B EN 19 TMUX1574 www.ti.com SCDS391C – OCTOBER 2018 – REVISED DECEMBER 2019 Product Folder Links: TMUX1574 Submit Documentation Feedback Copyright © 2018–2019, Texas Instruments Incorporated 7.11 Charge Injection The amount of charge injected into the source or drain of the device during the falling or rising edge of the gate signal is known as charge injection, and is denoted by the symbol QC. Figure 37 shows the setup used to measure charge injection from source (Sx) to drain (Dx). Figure 37. Charge-Injection Measurement Setup 7.12 Capacitance The parasitic capacitance of the device is captured at the source (Sx), drain (Dx), and select (SELx) pins. The capacitance is measured in both the on and off state and is denoted by the symbol CON and COFF. Figure 38 shows the setup used to measure capacitance. Figure 38. Capacitance Measurement Setup |
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