R1211x

8

TYPICAL APPLICATIONS AND TECHNICAL NOTES

<R1211x002A/R1211x002C>

DELAY

GND

EXT

AMPOUT

Inductor

R3

C4

C3

R1

R2

Diode

NMOS

C1

C2

C5 R4

NMOS

: IRF7601 (International Rectifier)

Inductor : LDR655312T-100 10

: LDR655312T-220 22

Diode

: CRS02 (Toshiba)

C1 : 4.7

C2 : 0.22

C3 : 10

C4 : 680pF (Ceramic)

C5 : 2200pF (Ceramic)

R1 : Output Voltage Setting Resistor 1

R2 : Output Voltage Setting Resistor 2

R3 : 30k

Ω

R4 : 30k

Ω

<R1211x002B/R1211x002D>

DELAY

GND

EXT

CE

Inductor

R3

C4

C3

R1

R2

Diode

NMOS

C1

C2

CE Control

NMOS

: IRF7601 (International Rectifier)

Inductor : LDR655312T-100 10

: LDR655312T-220 22

Diode

: CRS02 (Toshiba)

C1 : 4.7

C2 : 0.22

C3 : 10

C4 : 680pF (Ceramic)

R1 : Setting Output Voltage Resistor 1

R2 : Setting Output Voltage Resistor 2

R3 : 30k

Ω

[Note]

These example circuits may be applied to the output voltage requirement is 15V or less. If the output voltage

requirement is 15V or more, ratings of NMOS and diode as shown above is over the limit, therefore, choose

other external components.