| 전자부품 데이터시트 검색엔진 |
|
S3JB 데이터시트(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
|
|
|||||||||||||||||||||||||||||
S3JB 데이터시트(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
|
1 / 2 page ![]() - 498 - .082(2.08) .076(1.93) .012(.31) .006(.15) .012(.31) .006(.15) .008(.20) .004(.10) .056(1.41) .035(0.90) .147(3.73) .137(3.48) .187(4.75) .167(4.25) .103(2.61) .078(1.99) .208(5.28) .200(5.08) S3AB THRU S3MB 3.0 AMPS. Surface Mount Rectifiers Voltage Range 50 to 1000 Volts Current 3.0 Amperes Features For surface mounted application Glass passivated junction chip. Low forward voltage drop High current capability Easy pick and place High surge current capability Plastic material used carries Underwriters Laboratory Classification 94V-O High temperature soldering: 260 oC / 10 seconds at terminals Mechanical Data Case: Molded plastic Terminals: Solder plated Polarity: Indicated by cathode band Packaging: 16mm tape per EIA STD RS-481 Weight: 0.093 gram SMB/DO-214AA Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25 ℃ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Symbol S3AB S3BB S3DB S3GB S3JB S3KB S3MB Units Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V Maximum Average Forward Rectified Current @TL =75 ℃ I(AV) 3.0 A Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) IFSM 100 A Maximum Instantaneous Forward Voltage @ 3.0A VF 1.15 V Maximum DC Reverse Current @ TA =25 ℃ at Rated DC Blocking Voltage @ TA=125 ℃ IR 10.0 250 uA uA Typical Thermal Resistance (Note 3) R θJL 10 ℃/W Maximum Reverse Recovery Time ( Note 1 ) Trr 2.5 uS Typical Junction Capacitance ( Note 2 ) Cj 40 pF Operating Temperature Range TJ -55 to +150 ℃ Storage Temperature Range TSTG -55 to +150 ℃ Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A 2. Measured at 1 MHz and Applied VR=4.0 Volts 3. Measured on P.C. Board with 0.4 x 0.4” (10 x 10mm) Copper Pad Areas. |
유사한 부품 번호 - S3JB |
|
유사한 설명 - S3JB |
|
|
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |