FRA1007G datasheet(1/2 Pages) TSC

부품명	FRA1007G

상세설명	10 AMPS. Glass Passivated Fast Recovery Rectifiers

PDF	2 Pages

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제조업체	TSC [Taiwan Semiconductor Company, Ltd]

홈페이지	http://www.taiwansemi.com

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1 / 2 page

- 456 -

.412(10.5)

MAX

.185(4.70)

.175(4.44)

.055(1.40)

.045(1.14)

.27(6.86)

.23(5.84)

.11(2.79)

.10(2.54)

.025(0.64)

.014(0.35)

.154(3.91)

.148(3.74)

DIA

PIN1

2

.113(2.87)

.103(2.62)

.16(4.06)

.14(3.56)

.037(0.94)

.027(0.68)

.205(5.20)

.195(4.95)

.594(15.1)

.587(14.9)

.56(14.22)

.53(13.46)

PIN 1

PIN 2

Case Positive

CASE

FRA1001G THRU FRA1007G

10 AMPS. Glass Passivated Fast Recovery Rectifiers

Voltage Range

50 to 1000 Volts

Current

10 Amperes

Features

Low forward voltage drop

High current capability

High reliability

High surge current capability

Mechanical Data

Cases: ITO-220AC molded plastic

Epoxy: UL 94V-0 rate flame retardant

Terminals: Leads solderable per

MIL-STD-202, Method 208 guaranteed

Polarity: As marked

High temperature soldering guaranteed:

260

℃/10 seconds .16”,(4.06mm) from

case.

Mounting position: Any

Weight: 2.24 grams

TO-220A

Dimensions in inches and (millimeters)

Maximum Ratings and Electrical Characteristics

Rating at 25

℃ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

Type Number

Symbol FRA

1001G

FRA

1002G

FRA

1003G

FRA

1004G

FRA

1005G

FRA

1006G

FRA

1007G

Units

Maximum Recurrent Peak Reverse Voltage

VRRM

50

100

200

400

600

800

1000

V

Maximum RMS Voltage

VRMS

35

70

140

280

420

560

700

V

Maximum DC Blocking Voltage

VDC

50

100

200

400

600

800

1000

V

Maximum Average Forward Rectified Current

@TC = 55

℃

I(AV)

10

A

Peak Forward Surge Current, 8.3 ms Single Half

Sine-wave Superimposed on Rated Load (JEDEC

method )

IFSM

150

A

Maximum Instantaneous Forward Voltage @ 10A

VF

1.3

V

Maximum DC Reverse Current @ TC=25

℃

at Rated DC Blocking Voltage @ TC=125

℃

IR

5.0

100

uA

Maximum Reverse Recovery Time ( Note 2 )

Trr

150

250

500

nS

Typical Junction Capacitance ( Note 1 ) TJ=25

℃

Cj

100

pF

Typical Thermal Resistance (Note 3)

R

θJC

3.0

℃/W

Operating and Storage Temperature Range

TJ ,TSTG

-65 to +150

℃

Notes: 1. Measured at 1 MHz and Applied Reverse Voltage of 4..0 Volts D.C.

2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A

3. Thermal Resistance from Junction to Case, with Heatsink size 2” x 3” x 0.25” Al-Plate

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FRA1007G 데이터시트(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

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