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VIPER53SPTR-E 데이터시트(PDF) 4 Page - STMicroelectronics |
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VIPER53SPTR-E 데이터시트(HTML) 4 Page - STMicroelectronics |
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4 / 36 page ![]() Electrical characteristics VIPer53 - E 4/36 2 Electrical characteristics TJ = 25°C, VDD = 13V, unless otherwise specified Table 3. Power section Symbol Parameter Test conditions Min. Typ. Max. Unit BVDSS Drain-source voltage ID = 1mA; VCOMP = 0V 620 V IDSS Off state drain current VDS = 500V; VCOMP = 0V; TJ = 125°C 150 µA RDS(on) Static drain-source On state resistance ID = 1A; VCOMP = 4.5V; VTOVL = 0V TJ = 25°C TJ = 100°C 0.9 1 1.7 Ω Ω tfv Fall time ID = 0.2A; VIN = 300V (1) 1. On clamped inductive load 100 ns trv Rise time ID = 1A; VIN = 300V (1) 50 ns Coss Drain capacitance VDS = 25V 170 pF CEon Effective output capacitance 200V < VDSon < 400V (2) 2. This parameter can be used to compute the energy dissipated at turn on Eton according to the initial drain to source voltage VDSon and the following formula: 60 pF Table 4. Oscillator section Symbol Parameter Test conditions Min. Typ. Max. Unit FOSC1 Oscillator frequency initial accuracy RT = 8kΩ; CT = 2.2nF Figure 12 on page 12 95 100 105 kHz FOSC2 Oscillator frequency total variation RT = 8kΩ; CT = 2.2nF Figure 16 on page 14 VDD = VDDon ... VDDovp; TJ = 0 ... 100°C 93 100 107 kHz VOSChi Oscillator peak voltage 9V VOSClo Oscillator valley voltage 4V E ton 1 2 --- C Eon 300 2 V DSon 300 ---------------- ⎝⎠ ⎛⎞ 1.5 ⋅⋅ ⋅ = |
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