LB1201AS datasheet(2/14 Pages) POINN

2 / 14 page

TISP61060D, TISP61060P

DUAL FORWARD-CONDUCTING P-GATE THYRISTORS

PROGRAMMABLE OVERVOLTAGE PROTECTORS

SEPTEMBER 1995 - REVISED SEPTEMBER 1997

PRODUCT

INFORMATION

These monolithic protection devices are fabricated in ion-implanted planar vertical power structures for high

reliability and in normal system operation they are virtually transparent. The buffered gate design reduces the

loading on the SLIC supply during overvoltages caused by power cross and induction.

NOTES: 1. Initially the protector must be in thermal equilibrium with -40°C

≤ T

J ≤ 85°C. The surge may be repeated after the device returns to

its initial conditions.

2. The rated current values may be applied either to the Ring to Ground or to the Tip to Ground terminal pairs. Additionally, both

terminal pairs may have their rated current values applied simultaneously (in this case the Ground terminal current will be twice the

rated current value of an individual terminal pair). Above 85°C, derate linearly to zero at 150°C lead temperature.

absolute maximum ratings

RATING

SYMBOL

VALUE

UNIT

Repetitive peak off-state voltage, IG = 0, -40°C ≤ TJ ≤ 85°C

VDRM

-100

Repetitive peak gate-cathode voltage, VKA = 0, -40°C ≤ TJ ≤ 85°C

VGKRM

-85

Non-repetitive peak on-state pulse current (see Notes 1 and 2)

ITSP

10/1000 µs

10/160 µs

2/10 µs

Non-repetitive peak on-state current (see Notes 1 and 2)

ITSM

Arms

60 Hz sine-wave, 25 ms

60 Hz sine-wave, 2 s

Continuous on-state current (see Note 2)

ITM

0.3

Continuous forward current (see Note 2)

IFM

0.3

Operating free-air temperature range

-40 to +85

°C

Storage temperature range

Tstg

-40 to +150

°C

Lead temperature 1,6 mm (1/16 inch) from case for 10 s

260

°C

recommended operating conditions

MIN

TYP

MAX

UNIT

Gate decoupling capacitor

100

electrical characteristics, -40°C

≤ T

J ≤ 85°C (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Off-state current

VD = -85 V, VGK = 0 V

TJ = 25°C

µA

TJ = 85°C

µA

V(BO)

Breakover voltage

dv/dt = -250 V/ms, Source Resistance = 300

Ω, V

GG = -50 V

dv/dt = -250 V/ms, Source Resistance = 300

Ω, V

GG = -65 V

IT = 12.5 A, 10/1000 µs, Source Resistance = 80 Ω, VGG = -50 V

-53

-68

-55

Switching current

dv/dt = -250 V/ms, Source Resistance = 300

Ω, V

GG = -50 V

-100

On-state voltage

IT = 1 A

IT = 10 A

IT = 16 A

IT = 30 A

Forward voltage

IF = 1 A

IF = 10 A

IF = 16 A

IF = 30 A

Holding current

IT = -1 A, di/dt = +1A/ms, VGG = -50 V

-150

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