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TSM4420CS 데이터시트(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

부품명 TSM4420CS
상세설명  N-Channel Enhancement Mode MOSFET
PDF  3 Pages
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제조업체  TSC [Taiwan Semiconductor Company, Ltd]
홈페이지  http://www.taiwansemi.com
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TSM4420CS 데이터시트(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

  TSM4420CS Datasheet HTML 1Page - Taiwan Semiconductor Company, Ltd TSM4420CS Datasheet HTML 2Page - Taiwan Semiconductor Company, Ltd TSM4420CS Datasheet HTML 3Page - Taiwan Semiconductor Company, Ltd  
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TSM4420
2-3
2005/08 rev. B
Electrical Characteristics
TJ = 25
oC, unless otherwise noted
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250uA
BVDSS
25
--
--
V
VGS = 4.5V, ID = 11A
RDS(ON)
--
9
11
mΩ
Drain-Source On-State Resistance
VGS = 10V, ID = 13.5A
RDS(ON)
--
7
8.5
mΩ
Gate Threshold Voltage
VDS = VGS, ID = 250uA
VGS(TH)
1.0
--
3.0
V
Zero Gate Voltage Drain Current
VDS = 24V, VGS = 0V
IDSS
--
--
1.0
uA
Gate Body Leakage
VGS = ± 20V, VDS = 0V
IGSS
--
--
±100
nA
Forward Transconductance
VDS =10V, ID = 35A
gfs
--
50
--
S
Dynamic
Total Gate Charge
Qg
--
--
25
Gate-Source Charge
Qgs
--
6.6
--
Gate-Drain Charge
VDS = 15V, ID = 13.5A,
VGS = 5V
Qgd
--
4.0
--
nC
Turn-On Delay Time
td(on)
--
15
25
Turn-On Rise Time
tr
--
11
18
Turn-Off Delay Time
td(off)
--
40
60
Turn-Off Fall Time
VDD = 15V, RL = 15Ω,
ID = 1A, VGEN = 10V,
RG = 24Ω
tf
--
12
20
nS
Source-Drain Diode
Max. Diode Forward Current
IS
--
--
50
A
Diode Forward Voltage
IS = 20A, VGS = 0V
VSD
--
0.75
1.1
V
Note: 1. pulse test: pulse width <=300uS, duty cycle <=2%
2. Negligible, Dominated by circuit inductance.



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